公开(公告)号：US20190237568A1

公开(公告)日：2019-08-01

申请号：US15882053

申请日：2018-01-29

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Rahul Mishra ,  Vibhor Jain ,  Ajay Raman ,  Robert J. Gauthier

IPC: H01L29/749 ,  H01L29/66 ,  H01L29/74

Abstract: Fabrication methods and device structures for a silicon controlled rectifier. A cathode is arranged over a top surface of a substrate and a well is arranged beneath the top surface of the substrate. The cathode is composed of a semiconductor material having a first conductivity type, and the well also has the first conductivity type. A semiconductor layer, which has a second conductivity type opposite to the first conductivity type, includes a section over the top surface of the substrate. The section of the semiconductor layer is arranged to form an anode that adjoins the well along a junction.

公开(公告)号：US10727327B2

公开(公告)日：2020-07-28

申请号：US15882053

申请日：2018-01-29

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Rahul Mishra ,  Vibhor Jain ,  Ajay Raman ,  Robert J. Gauthier

IPC: H01L29/749 ,  H01L29/66 ,  H01L29/74 ,  H01L27/02 ,  H01L29/737

Abstract: Fabrication methods and device structures for a silicon controlled rectifier. A cathode is arranged over a top surface of a substrate and a well is arranged beneath the top surface of the substrate. The cathode is composed of a semiconductor material having a first conductivity type, and the well also has the first conductivity type. A semiconductor layer, which has a second conductivity type opposite to the first conductivity type, includes a section over the top surface of the substrate. The section of the semiconductor layer is arranged to form an anode that adjoins the well along a junction.