公开(公告)号：US09953927B1

公开(公告)日：2018-04-24

申请号：US15497828

申请日：2017-04-26

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Yun-Yu Wang ,  Daniel P. Stambaugh ,  Jeffrey Brown ,  Keith Kwong Hon Wong

IPC: H01L23/532 ,  H01L23/528 ,  H01L23/522 ,  H01L21/768

CPC classification number: H01L23/53266 ,  H01L21/76804 ,  H01L21/76846 ,  H01L21/76883 ,  H01L23/5226 ,  H01L23/53238

Abstract: Structures for a liner replacement in an interconnect structure and methods for forming a liner replacement in an interconnect structure. A metallization level is formed that includes a conductive feature. A dielectric layer is formed on the metallization level. The dielectric layer includes an opening that extends vertically through the dielectric layer to the conductive feature. An adhesion layer is formed on area of the conductive feature exposed at a base of the opening. The adhesion layer has a thickness equal to a monolayer or a fraction of a monolayer. Another layer (e.g., barrier layer) of a different composition (e.g., TiN) may be deposited on the adhesion layer before the opening is filled with metal deposited by chemical vapor deposition.