公开(公告)号：US09711447B1

公开(公告)日：2017-07-18

申请号：US15290277

申请日：2016-10-11

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Jiehui Shu ,  Qiang Fang ,  Daniel W. Fisher ,  Haigou Huang ,  Jinping Liu ,  Haifeng Sheng ,  Zhiguo Sun

IPC: H01L23/48 ,  H01L23/522 ,  H01L23/528 ,  H01L21/768

CPC classification number: H01L23/528 ,  H01L21/76807 ,  H01L21/76829 ,  H01L21/76877 ,  H01L23/53238

Abstract: Methods of lithographic patterning and structures formed by lithographic patterning. A hardmask layer is formed on a dielectric layer, a feature is formed on the hardmask layer, and a mandrel is formed that extends in a first direction across the first feature. The mandrel and the hardmask layer beneath the mandrel are removed to pattern the hardmask layer with the feature masking a section of the hardmask layer. After the hardmask layer is patterned, the dielectric layer is etched to form a first trench and a second trench that are separated by a section of the dielectric layer masked by the section of the hardmask layer. The first trench and the second trench are filled with a conductor layer to respectively form a first wire and a second wire that is separated from the first wire by the section of the dielectric layer.