公开(公告)号：US20160020275A1

公开(公告)日：2016-01-21

申请号：US14716696

申请日：2015-05-19

申请人： GLOBALFOUNDRIES Inc.

发明人： HaoCheng Tsai ,  Min-hwa Chi

IPC分类号： H01L29/06 ,  H01L21/762 ,  H01L29/78

CPC分类号： H01L29/0653 ,  H01L21/30608 ,  H01L21/3065 ,  H01L21/76224 ,  H01L21/76232 ,  H01L29/66568 ,  H01L29/66636 ,  H01L29/7846 ,  H01L29/7848

摘要： Embodiments of the present invention provide an improved shallow trench isolation structure and method of fabrication. The shallow trench isolation cavity includes an upper region having a sigma cavity shape, and a lower region having a substantially rectangular cross-section. The lower region is filled with a first material having good gap fill properties. The sigma cavity is filled with a second material having good stress-inducing properties. In some embodiments, source/drain stressor cavities may be eliminated, with the stress provided by the shallow trench isolation structure. In other embodiments, the stress from the shallow trench isolation structure may be used to complement or counteract stress from a source/drain stressor region of an adjacent transistor. This enables precise tuning of channel stress to achieve a desired carrier mobility for a transistor.

摘要翻译： 本发明的实施例提供了一种改进的浅沟槽隔离结构和制造方法。 浅沟槽隔离腔包括具有西格玛腔形状的上部区域和具有基本矩形横截面的下部区域。 下部区域填充有具有良好间隙填充性能的第一材料。 西格玛腔填充有具有良好的应力诱导性能的第二材料。 在一些实施例中，可以消除源极/漏极应力源空穴，同时由浅沟槽隔离结构提供的应力。 在其他实施例中，来自浅沟槽隔离结构的应力可以用于补偿或抵消来自相邻晶体管的源极/漏极应力区域的应力。 这使得能够精确地调谐通道应力以实现晶体管的期望的载流子迁移率。

公开(公告)号：US09548357B2

公开(公告)日：2017-01-17

申请号：US14716696

申请日：2015-05-19

申请人： GLOBALFOUNDRIES Inc.

发明人： HaoCheng Tsai ,  Min-hwa Chi

IPC分类号： H01L21/762 ,  H01L29/06 ,  H01L29/78 ,  H01L29/66 ,  H01L21/306 ,  H01L21/3065

CPC分类号： H01L29/0653 ,  H01L21/30608 ,  H01L21/3065 ,  H01L21/76224 ,  H01L21/76232 ,  H01L29/66568 ,  H01L29/66636 ,  H01L29/7846 ,  H01L29/7848

摘要： Embodiments of the present invention provide an improved shallow trench isolation structure and method of fabrication. The shallow trench isolation cavity includes an upper region having a sigma cavity shape, and a lower region having a substantially rectangular cross-section. The lower region is filled with a first material having good gap fill properties. The sigma cavity is filled with a second material having good stress-inducing properties. In some embodiments, source/drain stressor cavities may be eliminated, with the stress provided by the shallow trench isolation structure. In other embodiments, the stress from the shallow trench isolation structure may be used to complement or counteract stress from a source/drain stressor region of an adjacent transistor. This enables precise tuning of channel stress to achieve a desired carrier mobility for a transistor.

摘要翻译： 本发明的实施例提供了一种改进的浅沟槽隔离结构和制造方法。 浅沟槽隔离腔包括具有西格玛腔形状的上部区域和具有基本矩形横截面的下部区域。 下部区域填充有具有良好间隙填充性能的第一材料。 西格玛腔填充有具有良好的应力诱导性能的第二材料。 在一些实施例中，可以消除源极/漏极应力源空穴，同时由浅沟槽隔离结构提供的应力。 在其他实施例中，来自浅沟槽隔离结构的应力可以用于补偿或抵消来自相邻晶体管的源极/漏极应力区域的应力。 这使得能够精确地调谐通道应力以实现晶体管的期望的载流子迁移率。

公开(公告)号：US09076868B1

公开(公告)日：2015-07-07

申请号：US14334953

申请日：2014-07-18

申请人： GLOBALFOUNDRIES Inc.

发明人： HaoCheng Tsai ,  Min-hwa Chi

IPC分类号： H01L21/762 ,  H01L29/78 ,  H01L21/306 ,  H01L29/06 ,  H01L29/66

CPC分类号： H01L29/0653 ,  H01L21/30608 ,  H01L21/3065 ,  H01L21/76224 ,  H01L21/76232 ,  H01L29/66568 ,  H01L29/66636 ,  H01L29/7846 ,  H01L29/7848

摘要： Embodiments of the present invention provide an improved shallow trench isolation structure and method of fabrication. The shallow trench isolation cavity includes an upper region having a sigma cavity shape, and a lower region having a substantially rectangular cross-section. The lower region is filled with a first material having good gap fill properties. The sigma cavity is filled with a second material having good stress-inducing properties. In some embodiments, source/drain stressor cavities may be eliminated, with the stress provided by the shallow trench isolation structure. In other embodiments, the stress from the shallow trench isolation structure may be used to complement or counteract stress from a source/drain stressor region of an adjacent transistor. This enables precise tuning of channel stress to achieve a desired carrier mobility for a transistor.

摘要翻译： 本发明的实施例提供了一种改进的浅沟槽隔离结构和制造方法。 浅沟槽隔离腔包括具有西格玛腔形状的上部区域和具有基本矩形横截面的下部区域。 下部区域填充有具有良好间隙填充性能的第一材料。 西格玛腔填充有具有良好的应力诱导性能的第二材料。 在一些实施例中，可以消除源极/漏极应力源空穴，同时由浅沟槽隔离结构提供的应力。 在其他实施例中，来自浅沟槽隔离结构的应力可以用于补偿或抵消来自相邻晶体管的源极/漏极应力区域的应力。 这使得能够精确地调谐通道应力以实现晶体管的期望的载流子迁移率。