公开(公告)号：US20150200270A1

公开(公告)日：2015-07-16

申请号：US14156861

申请日：2014-01-16

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Stefan Flachowsky ,  Hermann Sachse ,  Maciej Wiatr

IPC: H01L29/66 ,  H01L27/092 ,  H01L29/78 ,  H01L21/8238

CPC classification number: H01L29/7816 ,  H01L21/26586 ,  H01L21/823418 ,  H01L21/823807 ,  H01L27/092 ,  H01L29/1083 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66575

Abstract: When forming semiconductor devices comprising high performance or low-power field effect transistors, the threshold voltage of the transistors is adjusted by the halo implantation and the source and drain regions are defined by a single implantation step. Thus, the number of process steps is reduced, whereas the electrical characteristics, such as leakage level, and performance of the transistors are maintained compared to conventional transistors.

Abstract translation: 当形成包括高性能或低功率场效应晶体管的半导体器件时，通过光晕注入来调节晶体管的阈值电压，并且通过单个注入步骤限定源极和漏极区域。 因此，与常规晶体管相比，工艺步骤的数量减少，而与诸如泄漏水平的电特性和晶体管的性能保持一致。