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1.发明申请SEMICONDUCTOR DEVICE COMPRISING METAL-BASED eFUSES OF ENHANCED PROGRAMMING EFFICIENCY BY ENHANCING METAL AGGLOMERATION AND/OR VOIDING 有权通过增强金属组合和/或消声来增强金属化程度的提高编程效率的半导体器件公开(公告)号：US20130307114A1
公开(公告)日：2013-11-21
申请号：US13952792
申请日：2013-07-29
Applicant: GLOBALFOUNDRIES Inc.
Inventor： Jens Poppe , Oliver Aubel , Christian Hennesthal , Holger Pagel , Andreas Kurz
IPC: H01L23/525
CPC classification number: H01L23/5256 , G11C17/16 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
Abstract: Metal fuses in semiconductor devices may be formed on the basis of additional mechanisms for obtaining superior electromigration in the fuse bodies. To this end, the compressive stress caused by the current-induced metal diffusion may be restricted or reduced in the fuse body, for instance, by providing a stress buffer region and/or by providing a dedicated metal agglomeration region. The concept may be applied to the metallization system and may also be used in the device level, when fabricating the metal fuse in combination with high-k metal gate electrode structures.
Abstract translation: 可以基于用于在保险丝体中获得优异的电迁移的附加机构来形成半导体器件中的金属熔丝。 为此，例如通过提供应力缓冲区域和/或通过提供专用的金属附聚区域，可以限制或减小由电流引起的金属扩散引起的压缩应力。 该概念可以应用于金属化系统，并且当与高k金属栅电极结构组合制造金属熔丝时也可以在器件级中使用。
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2.发明授权Semiconductor device comprising metal-based eFuses of enhanced programming efficiency by enhancing metal agglomeration and/or voiding 有权半导体器件包括通过增强金属聚集和/或排空而提高编程效率的基于金属的eFuse公开(公告)号：US08653624B2
公开(公告)日：2014-02-18
申请号：US13952792
申请日：2013-07-29
Applicant: GLOBALFOUNDRIES Inc.
Inventor： Christian Hennesthal , Oliver Aubel , Jens Poppe , Holger Pagel , Andreas Kurz
IPC: H01L23/52
CPC classification number: H01L23/5256 , G11C17/16 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
Abstract: Metal fuses in semiconductor devices may be formed on the basis of additional mechanisms for obtaining superior electromigration in the fuse bodies. To this end, the compressive stress caused by the current-induced metal diffusion may be restricted or reduced in the fuse body, for instance, by providing a stress buffer region and/or by providing a dedicated metal agglomeration region. The concept may be applied to the metallization system and may also be used in the device level, when fabricating the metal fuse in combination with high-k metal gate electrode structures.
Abstract translation: 可以基于用于在保险丝体中获得优异的电迁移的附加机构来形成半导体器件中的金属熔丝。 为此，例如通过提供应力缓冲区域和/或通过提供专用的金属附聚区域，可以限制或减小由电流引起的金属扩散引起的压缩应力。 该概念可以应用于金属化系统，并且当与高k金属栅电极结构组合制造金属熔丝时也可以在器件级中使用。
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