公开(公告)号：US20200227350A1

公开(公告)日：2020-07-16

申请号：US16248317

申请日：2019-01-15

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Jaladhi Mehta ,  Brian Greene ,  Daniel J. Dechene ,  Ahmed Hassan

IPC: H01L23/522 ,  H01L49/02 ,  H01L21/76

Abstract: Structures that include a passive device, such as a metal-based resistor, and methods of forming a structure that includes a passive device. The structure includes a semiconductor substrate, an interconnect structure including a passive device, and a dummy fill region arranged between the passive device and the semiconductor substrate. The dummy fill region includes a plurality of shallow trench isolation regions in the semiconductor substrate, a plurality of semiconductor fins, a plurality of source/drain regions in the plurality of semiconductor fins, and a plurality of contacts arranged over the plurality of shallow trench isolation regions.