Crack-stop structure for an IC product and methods of making such a crack-stop structure

    公开(公告)号:US10090258B1

    公开(公告)日:2018-10-02

    申请号:US15713843

    申请日:2017-09-25

    Abstract: One illustrative crack-stop structure disclosed herein may include a first crack-stop metallization layer comprising a first metal line layer that has a plurality of openings formed therein and a second crack-stop metallization layer positioned above and adjacent the first crack-stop metallization layer, wherein the second crack-stop metallization layer has a second metal line layer and a via layer, and wherein the via layer comprises a plurality of vias having a portion that extends at least partially into the openings in the first metal line layer of the first crack-stop metallization layer so as to thereby form a stepped, non-planar interface between the first metal line layer of the first crack-stop metallization layer and the via layer of the second crack-stop metallization layer.

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