公开(公告)号：US20140264877A1

公开(公告)日：2014-09-18

申请号：US14287993

申请日：2014-05-27

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ronny Pfuetzner ,  Jens Heinrich

IPC: H01L23/532 ,  H01L23/538

CPC classification number: H01L23/53228 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76856 ,  H01L23/53238 ,  H01L23/53295 ,  H01L23/5384 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes a first metallization layer positioned above a substrate of the semiconductor device, the metallization layer including a dielectric material and a copper-containing metal region embedded in the dielectric material. The semiconductor device also includes a conductive barrier layer positioned along substantially an entirety of an interface between the copper-containing metal region and the dielectric material, the conductive barrier layer including a copper/silicon compound that is in direct contact with the dielectric material along substantially the entirety of the interface.

Abstract translation: 半导体器件包括位于半导体器件的衬底上方的第一金属化层，金属化层包括介电材料和嵌入电介质材料中的含铜金属区域。 所述半导体器件还包括沿着所述含铜金属区域和所述电介质材料之间的界面的大致整体定位的导电阻挡层，所述导电阻挡层包括铜/硅化合物，所述铜/硅化合物基本上与所述电介质材料直接接触 整个界面。