公开(公告)号：US20170243748A1

公开(公告)日：2017-08-24

申请号：US15437837

申请日：2017-02-21

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Xintuo DAI ,  Jiong LI

IPC: H01L21/283 ,  H01L21/306 ,  H01L21/308

CPC classification number: H01L21/283 ,  H01L21/28114 ,  H01L21/28123 ,  H01L21/30604 ,  H01L21/3081 ,  H01L21/3085 ,  H01L21/32139 ,  H01L29/401 ,  H01L29/4238 ,  H01L29/513

Abstract: Methods for forming a gate structure of a circuit structure are provide. The methods for forming the gate structure may include: forming a first gate pattern in a gate mask layer, the forming including a first etching of rounded corner portions of the first gate pattern; forming a second gate pattern in the gate mask layer, the second gate pattern at least partially overlapping the first gate pattern, the forming including a second etching of rounded corner portions of the second gate pattern; and, etching the gate mask layer using the first gate pattern and second gate pattern to form the gate structure.