公开(公告)号：US09613181B2

公开(公告)日：2017-04-04

申请号：US14719424

申请日：2015-05-22

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ricardo Pablo. Mikalo ,  Joachim Deppe

IPC: H01L27/088 ,  G06F19/00 ,  H01L29/78 ,  H01L27/12 ,  H01L29/417

CPC classification number: G06F19/321 ,  G06F19/00 ,  G16H50/70 ,  H01L27/088 ,  H01L27/1207 ,  H01L29/41766 ,  H01L29/7835

Abstract: A semiconductor device structure includes a semiconductor substrate with an active region provided therein, a gate structure, a dummy gate structure and two contact regions provided in the active region for forming source and drain regions. The gate structure and the dummy gate structure are formed on the semiconductor substrate so as to partially overlie the active region, and one of the contact regions is located at one side of the dummy gate structure. The semiconductor device structure includes a contact structure contacting one of the contact regions and the dummy gate for connecting this contact region and the dummy gate to one of a Vdd rail and a Vss rail. The active region has an extension portion protruding laterally away from the active region relative to the other contact region, where the contact structure is located over the extension portion.

公开(公告)号：US20150349120A1

公开(公告)日：2015-12-03

申请号：US14719424

申请日：2015-05-22

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ricardo Pablo. Mikalo ,  Joachim Deppe

IPC: H01L29/78 ,  H01L27/088 ,  H01L29/417 ,  H01L27/12

CPC classification number: G06F19/321 ,  G06F19/00 ,  G16H50/70 ,  H01L27/088 ,  H01L27/1207 ,  H01L29/41766 ,  H01L29/7835

Abstract: A semiconductor device structure includes a semiconductor substrate with an active region provided therein, a gate structure, a dummy gate structure and two contact regions provided in the active region for forming source and drain regions. The gate structure and the dummy gate structure are formed on the semiconductor substrate so as to partially overlie the active region, and one of the contact regions is located at one side of the dummy gate structure. The semiconductor device structure includes a contact structure contacting one of the contact regions and the dummy gate for connecting this contact region and the dummy gate to one of a Vdd rail and a Vss rail. The active region has an extension portion protruding laterally away from the active region relative to the other contact region, where the contact structure is located over the extension portion.

Abstract translation: 半导体器件结构包括其中设置有有源区的半导体衬底，栅极结构，虚拟栅极结构和设置在用于形成源极和漏极区域的有源区中的两个接触区域。 栅极结构和虚拟栅极结构形成在半导体衬底上以部分覆盖有源区，并且一个接触区位于虚拟栅极结构的一侧。 半导体器件结构包括接触结构中的一个接触区域和伪栅极，用于将该接触区域和虚拟栅极连接到Vdd轨道和Vss轨道之一。 有源区域具有相对于另一接触区域横向远离有源区域突出的延伸部分，其中接触结构位于延伸部分上方。