公开(公告)号：US20200020769A1

公开(公告)日：2020-01-16

申请号：US16032878

申请日：2018-07-11

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Jianwei PENG ,  Sang Woo LIM ,  Matthew Wahlquist STOKER ,  Huang LIU ,  Jinping LIU

IPC: H01L29/08 ,  H01L21/8238 ,  H01L27/092

Abstract: A method of forming a logic or memory cell with an epi-RSD width of larger than 1.3x fin pitch and the resulting device are provided. Embodiments include a device including a RSD region formed on each of a plurality of fins over a substrate, wherein the RSD has a width larger than 1.3x fin pitch, a TS formed on the RSD, and an ILD formed over the TS.