公开(公告)号：US20190019862A1

公开(公告)日：2019-01-17

申请号：US15649294

申请日：2017-07-13

Applicant: GLOBALFOUNDRIES Inc.

Inventor： A K M Zahidur Rahim CHOWDHURY ,  Shahrukh Akbar KHAN ,  Joseph SHEPARD, JR. ,  Mohammad HASANUZZAMAN ,  Naved A. SIDDIQUI ,  Shafaat AHMED

IPC: H01L29/06 ,  H01L29/423 ,  H01L29/78 ,  H01L29/66 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/762 ,  H01L21/324

Abstract: Methods for preventing fin bending in FinFET devices and related devices are provided. Embodiments include forming fins in a substrate; forming a non-conformal sacrificial layer over and between the fins to structurally conjoin the fins or an array of fins for structural integrity; forming a first gap-fill dielectric over the sacrificial layer and fins; recessing the first gap-fill dielectric to expose an upper portion of the fins and sacrificial layer; etching the sacrificial layer to expose the fins; forming a second gap-fill dielectric over the first gap-fill dielectric and over and between the fins; and recessing the second gap-fill dielectric to expose the upper portion of the fins.