公开(公告)号：US20180019162A1

公开(公告)日：2018-01-18

申请号：US15208852

申请日：2016-07-13

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Shafaat AHMED ,  Shahrukh Akbar KHAN ,  Vishal CHHABRA

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L21/76834 ,  H01L21/76814 ,  H01L21/76832 ,  H01L21/76849 ,  H01L23/5226 ,  H01L23/53209 ,  H01L23/53238 ,  H01L23/53295

Abstract: A method of forming an amorphous carbon (aC) layer as a barrier layer for preventing etching of metals in a dual damascene metallization process and the resulting device are provided. Embodiments include forming an inter-layer dielectric (ILD) layer over a substrate with the first ILD having recesses for a first metallization layer. Then forming a TaN barrier layer and Co liner in the recesses, filling the recesses with a metal, forming a Co cap layer over the metal and forming a conformal aC layer over the substrate are accomplished. Furthermore, an Nblock layer, an ILD layer and a metal hard mask layer completes the stack on top to the aC layer. Subsequently, the embodiments include etching vias through this stack down to the aC layer, thereby protecting the first metallized layer.

公开(公告)号：US20190019862A1

公开(公告)日：2019-01-17

申请号：US15649294

申请日：2017-07-13

Applicant: GLOBALFOUNDRIES Inc.

Inventor： A K M Zahidur Rahim CHOWDHURY ,  Shahrukh Akbar KHAN ,  Joseph SHEPARD, JR. ,  Mohammad HASANUZZAMAN ,  Naved A. SIDDIQUI ,  Shafaat AHMED

IPC: H01L29/06 ,  H01L29/423 ,  H01L29/78 ,  H01L29/66 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/762 ,  H01L21/324

Abstract: Methods for preventing fin bending in FinFET devices and related devices are provided. Embodiments include forming fins in a substrate; forming a non-conformal sacrificial layer over and between the fins to structurally conjoin the fins or an array of fins for structural integrity; forming a first gap-fill dielectric over the sacrificial layer and fins; recessing the first gap-fill dielectric to expose an upper portion of the fins and sacrificial layer; etching the sacrificial layer to expose the fins; forming a second gap-fill dielectric over the first gap-fill dielectric and over and between the fins; and recessing the second gap-fill dielectric to expose the upper portion of the fins.