公开(公告)号：US09903707B2

公开(公告)日：2018-02-27

申请号：US14857914

申请日：2015-09-18

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Padraig Timoney ,  Alok Vaid

IPC: H01L21/02 ,  G01B11/06 ,  H01L21/66

CPC classification number: G01B11/06 ,  H01L22/12 ,  H01L22/20 ,  H01L22/26

Abstract: Methodologies and an apparatus for enabling three-dimensional scatterometry to be used to measure a thickness of dielectric layers in semiconductor devices are provided. Embodiments include initiating optical critical dimension (OCD) scatterometry on a three-dimensional test structure formed on a wafer, the three-dimensional test structure comprising patterned copper (Cu) trenches with an ultra-low k (ULK) dielectric film formed over the patterned Cu trenches; and obtaining, by a processor, a thickness of the ULK dielectric film based on results of the OCD scatterometry.

公开(公告)号：US10508900B2

公开(公告)日：2019-12-17

申请号：US15870108

申请日：2018-01-12

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Padraig Timoney ,  Alok Vaid

IPC: H01L21/66 ,  G01B11/06

Abstract: Methodologies and an apparatus for enabling three-dimensional scatterometry to be used to measure a thickness of dielectric layers in semiconductor devices are provided. Embodiments include initiating optical critical dimension (OCD) scatterometry on a three-dimensional test structure formed on a wafer, the three-dimensional test structure comprising patterned copper (Cu) trenches with an ultra-low k (ULK) dielectric film formed over the patterned Cu trenches; and obtaining, by a processor, a thickness of the ULK dielectric film based on results of the OCD scatterometry.