公开(公告)号：US20180366372A1

公开(公告)日：2018-12-20

申请号：US15626321

申请日：2017-06-19

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Puneet H. Suvarna ,  Steven Bentley ,  Mark V. Raymond ,  Peter M. Zeitzoff

IPC: H01L21/8234 ,  H01L21/285 ,  H01L27/088 ,  H01L29/45 ,  H01L29/78 ,  H01L29/08

Abstract: Embodiments of the disclosure provide integrated circuit (IC) structures with stepped epitaxial regions and methods of forming the same. A method according to the disclosure can include: removing a portion of a substrate to form a recess therein, the portion of the substrate being laterally adjacent to a semiconductor fin having a sidewall spacer thereon, to expose an underlying sidewall of the semiconductor fin; forming an epitaxial layer within the recess, such that the epitaxial layer laterally abuts the sidewall of the semiconductor fin below the sidewall spacer; removing a portion of the epitaxial layer to form a stepped epitaxial region adjacent to the semiconductor fin, the stepped epitaxial region including a first region laterally abutting the sidewall of the semiconductor fin, and a second region laterally adjacent to the first region; and forming a gate structure over the stepped epitaxial region and adjacent to the semiconductor fin.

公开(公告)号：US10157794B1

公开(公告)日：2018-12-18

申请号：US15626321

申请日：2017-06-19

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Puneet H. Suvarna ,  Steven Bentley ,  Mark V. Raymond ,  Peter M. Zeitzoff

IPC: H01L21/8234 ,  H01L21/285 ,  H01L27/088 ,  H01L29/45 ,  H01L29/78 ,  H01L29/08 ,  H01L29/423

Abstract: Embodiments of the disclosure provide integrated circuit (IC) structures with stepped epitaxial regions and methods of forming the same. A method according to the disclosure can include: removing a portion of a substrate to form a recess therein, the portion of the substrate being laterally adjacent to a semiconductor fin having a sidewall spacer thereon, to expose an underlying sidewall of the semiconductor fin; forming an epitaxial layer within the recess, such that the epitaxial layer laterally abuts the sidewall of the semiconductor fin below the sidewall spacer; removing a portion of the epitaxial layer to form a stepped epitaxial region adjacent to the semiconductor fin, the stepped epitaxial region including a first region laterally abutting the sidewall of the semiconductor fin, and a second region laterally adjacent to the first region; and forming a gate structure over the stepped epitaxial region and adjacent to the semiconductor fin.