公开(公告)号：US10103067B1

公开(公告)日：2018-10-16

申请号：US15617388

申请日：2017-06-08

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Peter Baars ,  Gunter Grasshoff ,  Rico Hueselitz

IPC: H01L21/76 ,  H01L21/84 ,  H01L21/762 ,  H01L21/311 ,  H01L29/78 ,  H01L21/02 ,  H01L29/161 ,  H01L21/8238

Abstract: A method of manufacturing a trench isolation of a semiconductor device is provided including providing a silicon-on-insulator (SOI) substrate comprising a semiconductor bulk substrate, a buried oxide layer formed on the semiconductor bulk substrate and a semiconductor layer formed on the buried oxide layer, forming a trench through the semiconductor layer and extending at least partially into the buried oxide layer, forming a liner at sidewalls of the trench, deepening the trench into the semiconductor bulk substrate, filling the deepened trench with a flowable dielectric material, and performing an anneal of the flowable dielectric material.