公开(公告)号：US08609510B1

公开(公告)日：2013-12-17

申请号：US13623893

申请日：2012-09-21

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Srinvasa Banna ,  Andy C. Wei

IPC: H01L21/76

CPC classification number: H01L21/76224 ,  H01L21/823431 ,  H01L21/845 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7848

Abstract: Embodiments of the invention provide approaches for replacement metal gate (RMG) diffusion break formation. Specifically, a diffusion break is created after source/drain (S/D) formation, thereby allowing facet free and high quality S/D formation. A dummy gate body is removed selective to a sidewall section of a capping layer and a GOx layer formed over a substrate, and the opening is then extended through the GOx layer and into the substrate by etching the dummy gate body selective to the sidewall section of the capping layer. Retaining the capping layer during the dummy gate body etch enables the diffusion break to be self-aligned to the gate and eliminates device variability due to S/D volume variations. Processing then continues with RMG poly open chemical mechanical planarization (POC) and poly open planarization (POP).

Abstract translation: 本发明的实施例提供了替代金属栅极（RMG）扩散断裂形成的方法。 具体地说，在源极/漏极（S / D）形成之后产生扩散断裂，从而允许无小面积和高质量的S / D形成。 选择性地对封盖层的侧壁部分和形成在基板上的GOx层进行选择性的虚拟栅极体，然后通过蚀刻对该侧壁部分的侧壁部分选择性的虚拟栅极体，将开口延伸穿过GOx层并进入基板 盖层。 在虚拟门体蚀刻期间保持覆盖层使得扩散断裂能够自对准到栅极并消除由于S / D体积变化引起的器件变异性。 然后处理继续使用RMG多开放化学机械平面化（POC）和多孔平面化（POP）。