公开(公告)号：US09195132B2

公开(公告)日：2015-11-24

申请号：US14168396

申请日：2014-01-30

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Suraj K. Patil ,  SherJang Singh ,  Uzodinma Okoroanyanwu ,  Obert R. Wood ,  Pawitter J. S. Mangat

IPC: G03F1/24

CPC classification number: G03F1/24

Abstract: A lithography mask structure is provided, including: a substrate; at least one reflective layer over the substrate; and an absorber film stack over the at least one reflective layer, the absorber film stack including a plurality of first film layers of a first material and at least one second film layer of a second material. The second material is different from the first material, and the second film layer(s) is interleaved with the plurality of first film layers. In one embodiment, the total thickness of the absorber film stack is less than 50 nm. In another embodiment, the reflectivity of the absorber film stack is less than 2% for a pre-defined wavelength of EUV light. In a further embodiment, the second film layer(s) prevents the average crystallite size of the first film layers from exceeding the thickness of the first film layers.

Abstract translation: 提供光刻掩模结构，包括：基板; 衬底上的至少一个反射层; 以及在所述至少一个反射层上的吸收膜叠层，所述吸收膜叠层包括多个第一材料的第一膜层和至少一个第二材料的第二膜层。 第二材料与第一材料不同，并且第二膜层与多个第一膜层交错。 在一个实施例中，吸收膜叠层的总厚度小于50nm。 在另一个实施例中，对于预定波长的EUV光，吸收膜叠层的反射率小于2％。 在另一实施例中，第二膜层防止第一膜层的平均微晶尺寸超过第一膜层的厚度。