公开(公告)号：US20210013405A1

公开(公告)日：2021-01-14

申请号：US16504344

申请日：2019-07-08

Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.

Inventor： DAO HWEE GRAYSON WONG ,  KAZUTAKA YAMANE ,  JU DY LIM ,  DINGGUI ZENG ,  CHIM SENG SEET

IPC: H01L45/00

Abstract: The disclosure relates generally to resistive switching nonvolatile random access memory (ReRAM) devices, and more generally to structures and methods of fabricating multiple conductive elements in ReRAM devices. A resistive memory device is presented, the device comprising a first electrode having a first work function, and a second electrode having a second work function, the first work function being different from the second work function. A dielectric layer is disposed between the first and second electrodes. The device further comprises a set of nanocrystal structures distributed in the dielectric layer. A conductive layer is also disposed in the dielectric layer.