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公开(公告)号：US20200295165A1
公开(公告)日：2020-09-17
申请号：US16299860
申请日：2019-03-12
IPC分类号： H01L29/737 , H01L29/66 , H01L29/06 , H01L21/768 , H01L29/165 , H01L23/528
摘要： Transistor-based sensors and fabrication methods for a transistor-based sensor. A semiconductor layer is arranged over a substrate, and an interconnect structure is arranged over the semiconductor layer and the substrate. The semiconductor layer includes first sections composed of a semiconductor material, second sections composed of the semiconductor material, and cavities. The first sections have an alternating arrangement with the second sections in a lateral direction. The semiconductor material of the first sections is polycrystalline, and the semiconductor material of the second sections is single-crystal. First and second openings each extend in a vertical direction through the metallization levels of the interconnect structure to the semiconductor layer or through the substrate to the semiconductor layer. The first opening defines a first fluid inlet coupled to the cavities, and the second opening defines a first fluid outlet coupled to the cavities.
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公开(公告)号：US10957787B2
公开(公告)日：2021-03-23
申请号：US16299860
申请日：2019-03-12
IPC分类号： H01L29/165 , H01L29/737 , H01L29/66 , H01L29/06 , H01L23/528 , H01L21/768 , G01N27/414
摘要： Transistor-based sensors and fabrication methods for a transistor-based sensor. A semiconductor layer is arranged over a substrate, and an interconnect structure is arranged over the semiconductor layer and the substrate. The semiconductor layer includes first sections composed of a semiconductor material, second sections composed of the semiconductor material, and cavities. The first sections have an alternating arrangement with the second sections in a lateral direction. The semiconductor material of the first sections is polycrystalline, and the semiconductor material of the second sections is single-crystal. First and second openings each extend in a vertical direction through the metallization levels of the interconnect structure to the semiconductor layer or through the substrate to the semiconductor layer. The first opening defines a first fluid inlet coupled to the cavities, and the second opening defines a first fluid outlet coupled to the cavities.
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公开(公告)号：US11016055B2
公开(公告)日：2021-05-25
申请号：US16506236
申请日：2019-07-09
IPC分类号： G01N27/414 , H01L27/12 , H01L29/66 , H01L29/78 , H01L29/778
摘要： Structures for transistor-based sensors and related fabrication methods. A layer stack is formed that includes a semiconductor layer and a cavity. A transistor is formed that has a gate electrode over the layer stack, and an interconnect structure is formed over the layer stack and the transistor. First and second openings are formed that extend through the metallization levels of the interconnect structure and the semiconductor layer to the cavity. The first opening defines a fluid inlet coupled to the cavity, and the second opening defines a fluid outlet coupled to the cavity.
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公开(公告)号：US20210010971A1
公开(公告)日：2021-01-14
申请号：US16506236
申请日：2019-07-09
IPC分类号： G01N27/414
摘要： Structures for transistor-based sensors and related fabrication methods. A layer stack is formed that includes a semiconductor layer and a cavity. A transistor is formed that has a gate electrode over the layer stack, and an interconnect structure is formed over the layer stack and the transistor. First and second openings are formed that extend through the metallization levels of the interconnect structure and the semiconductor layer to the cavity. The first opening defines a fluid inlet coupled to the cavity, and the second opening defines a fluid outlet coupled to the cavity.
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