公开(公告)号：US20210135101A1

公开(公告)日：2021-05-06

申请号：US16672632

申请日：2019-11-04

Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.

Inventor： Desmond Jia Jun LOY ,  Eng Huat TOH ,  Shyue Seng TAN ,  Steven SOSS

IPC: H01L45/00

Abstract: A memory device may include at least one inert electrode, at least one active electrode, an insulating element arranged at least partially between the at least one active electrode and the at least one inert electrode, and a switching element arranged under the insulating element. The switching element may be arranged at least partially between the at least one active electrode and the at least one inert electrode. The switching element may include a first end and a second end contacting the at least one active electrode; and a middle segment between the first end and the second end, where the middle segment may at least partially contact the at least one inert electrode.