公开(公告)号：US20210365768A1

公开(公告)日：2021-11-25

申请号：US16880253

申请日：2020-05-21

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Akhilesh R. JAISWAL ,  Ajey Poovannummoottil JACOB ,  Yusheng BIAN ,  Michal RAKOWSKI

IPC: G06N3/067 ,  H01L27/144 ,  H01L31/02 ,  H01L31/0232 ,  G06N3/04

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to optical neuro-mimetic devices and methods of manufacture. The structure includes: a plurality of photodetectors and electrical circuitry that converts photocurrent generated from the photodetectors into electrical current and then sums up the electrical current to mimic neural functionality.

公开(公告)号：US20220180923A1

公开(公告)日：2022-06-09

申请号：US17110674

申请日：2020-12-03

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Akhilesh R. JAISWAL ,  Bipul C. PAUL ,  Steven R. SOSS

IPC: G11C11/412 ,  G11C11/419

Abstract: The present disclosure relates to a structure including a latch circuit, a first non-volatile field effect transistor (FET) connecting to a first side of the latch circuit and a bit line, and a second non-volatile field effect transistor (FET) connecting to a second side of the latch circuit and a complementary bit line.