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公开(公告)号：US20210265519A1
公开(公告)日：2021-08-26
申请号：US16799183
申请日：2020-02-24
Applicant: GLOBALFOUNDRIES U.S. INC.
Inventor： Asif J. CHOWDHURY , Ajey Poovannummoottil JACOB , Yusheng BIAN , Michal RAKOWSKI
IPC: H01L31/107 , H01L31/02 , H01L31/0232
Abstract: The present disclosure relates to semiconductor structures and, more particularly, to photodiode structures and methods of manufacture. The structure includes: a charge region having a first doping concentration and a variable width; a multiplication region adjacent to the charge region; and an absorption region adjacent to the variable width charge region.
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