公开(公告)号：US11664432B2

公开(公告)日：2023-05-30

申请号：US16556796

申请日：2019-08-30

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Dirk Utess ,  Zhixing Zhao ,  Dominik M. Kleimaier ,  Irfan A. Saadat ,  Florent Ravaux

IPC: H01L27/092 ,  H01L29/417 ,  H01L29/40 ,  H01L29/78

CPC classification number: H01L29/41775 ,  H01L27/092 ,  H01L29/401 ,  H01L29/7845

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a layout optimization for radio frequency (RF) device performance and methods of manufacture. The structure includes: a first active device on a substrate; source and drain diffusion regions adjacent to the first active device; and a first contact in electrical contact with the source and drain diffusion regions and which is spaced away from the first active device to optimize a stress component in a channel region of the first active device.

公开(公告)号：US10923594B2

公开(公告)日：2021-02-16

申请号：US16227059

申请日：2018-12-20

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Dirk Utess ,  Peter Philipp Steinmann ,  Stephanie Wilhelm

IPC: H01L29/78 ,  H01L21/8234 ,  H01L27/088

Abstract: One illustrative integrated circuit product disclosed herein comprises first and second spaced-apart P-active regions positioned on a buried insulation layer positioned on a base substrate, at least one first PFET transistor in the first P-active region, and a plurality of second PFET transistors in the second P-active region, wherein the first P-active region has a first length (in the gate length direction of the device) and the second P-active region has a second length that is greater than the first length and wherein the number of second PFET transistors is greater than the number of first PFET transistors. In this example, the product also includes a tensile-stressed layer of material positioned on the at least one first PFET transistor and above the first P-active region and a compressive-stressed layer of material positioned on the plurality of second PFET transistors and above the second P-active region.