公开(公告)号：US11664432B2

公开(公告)日：2023-05-30

申请号：US16556796

申请日：2019-08-30

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Dirk Utess ,  Zhixing Zhao ,  Dominik M. Kleimaier ,  Irfan A. Saadat ,  Florent Ravaux

IPC: H01L27/092 ,  H01L29/417 ,  H01L29/40 ,  H01L29/78

CPC classification number: H01L29/41775 ,  H01L27/092 ,  H01L29/401 ,  H01L29/7845

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a layout optimization for radio frequency (RF) device performance and methods of manufacture. The structure includes: a first active device on a substrate; source and drain diffusion regions adjacent to the first active device; and a first contact in electrical contact with the source and drain diffusion regions and which is spaced away from the first active device to optimize a stress component in a channel region of the first active device.

公开(公告)号：US20240284680A1

公开(公告)日：2024-08-22

申请号：US18172027

申请日：2023-02-21

Applicant: GlobalFoundries U.S. Inc.

Inventor： Zhixing Zhao ,  Dominik M. Kleimaier ,  Stefan Duenkel

IPC: H10B51/30 ,  G11C11/22 ,  H01L29/78

CPC classification number: H10B51/30 ,  G11C11/2275 ,  H01L29/78391

Abstract: A ferroelectric memory device includes a substrate including a source region and a drain region, and a gate structure disposed over the substrate. The gate structure includes a gate electrode including a plurality of electrode portions arranged in a first direction parallel to a top surface of the substrate, an oxide layer including a plurality of oxide portions corresponding respectively to the plurality of electrode portions, and a ferroelectric layer disposed between the gate electrode and the oxide layer along a second direction perpendicular to the first direction and including a plurality of ferroelectric portions corresponding respectively to the plurality of oxide portions. A least one of the plurality of oxide portions and at least one of the plurality of ferroelectric portions have different thicknesses along the second direction.