公开(公告)号：US20210351068A1

公开(公告)日：2021-11-11

申请号：US17382645

申请日：2021-07-22

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Hui ZANG ,  Ruilong XIE ,  Jessica M. DECHENE

IPC: H01L21/762 ,  H01L21/308 ,  H01L29/66 ,  H01L27/088

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to single diffusion cut for gate structures and methods of manufacture. The structure includes a single diffusion break extending into a substrate between diffusion regions of adjacent gate structures, the single diffusion break filled with an insulator material and further comprising an undercut region lined with a liner material which is between the insulator material and the diffusion regions.

公开(公告)号：US20220344212A1

公开(公告)日：2022-10-27

申请号：US17861450

申请日：2022-07-11

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Hui ZANG ,  Ruilong XIE

IPC: H01L21/8234 ,  H01L29/66 ,  H01L21/768 ,  H01L27/088 ,  H01L29/78

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a single diffusion cut for gate structures and methods of manufacture. The structure includes: a plurality of fin structures; a plurality of gate structures extending over the plurality of fin structures; a plurality of diffusion regions adjacent to the each of the plurality of gate structures; a single diffusion break between the diffusion regions of the adjacent gate structures; and a liner separating the single diffusion break from the diffusion regions.

公开(公告)号：US20240030059A1

公开(公告)日：2024-01-25

申请号：US18376664

申请日：2023-10-04

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Hui ZANG ,  Ruilong XIE ,  Jessica M. DECHENE

IPC: H01L21/762 ,  H01L21/308 ,  H01L29/66 ,  H01L27/088

CPC classification number: H01L21/76232 ,  H01L21/3086 ,  H01L29/66795 ,  H01L29/66545 ,  H01L27/0886

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to single diffusion cut for gate structures and methods of manufacture. The structure includes a single diffusion break extending into a substrate between diffusion regions of adjacent gate structures, the single diffusion break filled with an insulator material and further comprising an undercut region lined with a liner material which is between the insulator material and the diffusion regions.