公开(公告)号：US11810853B2

公开(公告)日：2023-11-07

申请号：US17702255

申请日：2022-03-23

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Il Goo Kim ,  Roderick A. Augur

IPC: H01L23/522 ,  H01L21/768 ,  H10B61/00 ,  H10B63/00

CPC classification number: H01L23/5226 ,  H01L21/76897 ,  H10B61/00 ,  H10B63/84

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to top electrode interconnect structures and methods of manufacture. The structure includes: a lower metallization feature; an upper metallization feature; a bottom electrode in direct contact with the lower metallization feature; one or more switching materials over the bottom electrode; a top electrode over the one or more switching materials; and a self-aligned via interconnection in contact with the top electrode and the upper metallization feature.

公开(公告)号：US11315870B2

公开(公告)日：2022-04-26

申请号：US16197646

申请日：2018-11-21

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Il Goo Kim ,  Roderick A. Augur

IPC: H01L23/522 ,  H01L21/768 ,  H01L27/24 ,  H01L27/22

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to top electrode interconnect structures and methods of manufacture. The structure includes: a lower metallization feature; an upper metallization feature; a bottom electrode in direct contact with the lower metallization feature; one or more switching materials over the bottom electrode; a top electrode over the one or more switching materials; and a self-aligned via interconnection in contact with the top electrode and the upper metallization feature.