公开(公告)号：US11309210B2

公开(公告)日：2022-04-19

申请号：US16568902

申请日：2019-09-12

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Nicholas V. Licausi ,  Guillaume Bouche ,  Lars W. Liebmann

IPC: H01L27/108 ,  H01L27/088 ,  H01L27/092 ,  H01L21/74 ,  H01L23/528 ,  H01L23/535 ,  H01L21/8234

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to self-aligned buried power rail structures and methods of manufacture. The method includes: forming at least one fin structure of a first dimension in a substrate; forming at least one fin structure of a second dimension in the substrate; removing at least a portion of the at least one fin structure of the second dimension to form a trench; filling the trench with conductive metal to form a buried power rail structure within the trench; and forming a contact to the buried power rail structure.

公开(公告)号：US11114338B2

公开(公告)日：2021-09-07

申请号：US16436117

申请日：2019-06-10

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Nicholas V. Licausi ,  Xunyuan Zhang

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H01L21/3213

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to fully aligned via structures and methods of manufacture. The structure includes: a plurality of minimum ground rule conductive structures formed in a dielectric material each of which comprises a recessed conductive material therein; at least one conductive structure formed in the dielectric material which is wider than the plurality of minimum ground rule conductive structures; an etch stop layer over a surface of the dielectric layer with openings to expose the conductive material of the least one conductive structure and the recessed conductive material of a selected minimum ground rule conductive structure; and an upper conductive material fully aligned with and in direct electrical contact with the at least one conductive structure and the selected minimum ground rule conductive structure, through the openings of the etch stop layer.