公开(公告)号：US11061315B2

公开(公告)日：2021-07-13

申请号：US16191589

申请日：2018-11-15

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Jia Zeng ,  Guillaume Bouche ,  Lei Sun ,  Geng Han

IPC: H01L21/00 ,  G03F1/24 ,  H01L21/033 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/308

Abstract: Methods pattern a sacrificial material on an etch mask into mandrels using optical mask lithography, form a conformal material and a fill material on the mandrels, and planarize the fill material to the level of the conformal material. Such methods pattern the fill material into first mask features using extreme ultraviolet (EUV) lithography. These methods partially remove the conformal material to leave the conformal material on the sidewalls of the mandrels as second mask features. Spaces between the first mask features and the second mask features define an etching pattern. The spacing distance of the mandrels is larger than the spacing distance of the second mask features. Such methods transfer the etching pattern into the etch mask material, and subsequently transfer the etching pattern into an underlying layer. Openings in the underlying layer are filled with a conductor to form wiring in the etching pattern.

公开(公告)号：US12142516B2

公开(公告)日：2024-11-12

申请号：US17678437

申请日：2022-02-23

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Nicholas V. LiCausi ,  Guillaume Bouche ,  Lars W. Liebmann

IPC: H01L21/74 ,  H01L23/528 ,  H01L23/535 ,  H01L27/088 ,  H01L27/092 ,  H10B12/00 ,  H01L21/8234

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to self-aligned buried power rail structures and methods of manufacture. The method includes: forming at least one fin structure of a first dimension in a substrate; forming at least one fin structure of a second dimension in the substrate; removing at least a portion of the at least one fin structure of the second dimension to form a trench; filling the trench with conductive metal to form a buried power rail structure within the trench; and forming a contact to the buried power rail structure.

公开(公告)号：US11309210B2

公开(公告)日：2022-04-19

申请号：US16568902

申请日：2019-09-12

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Nicholas V. Licausi ,  Guillaume Bouche ,  Lars W. Liebmann

IPC: H01L27/108 ,  H01L27/088 ,  H01L27/092 ,  H01L21/74 ,  H01L23/528 ,  H01L23/535 ,  H01L21/8234

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to self-aligned buried power rail structures and methods of manufacture. The method includes: forming at least one fin structure of a first dimension in a substrate; forming at least one fin structure of a second dimension in the substrate; removing at least a portion of the at least one fin structure of the second dimension to form a trench; filling the trench with conductive metal to form a buried power rail structure within the trench; and forming a contact to the buried power rail structure.