公开(公告)号：US11705455B2

公开(公告)日：2023-07-18

申请号：US16930547

申请日：2020-07-16

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Thorsten E. Kammler ,  Peter Baars

IPC: H01L27/092 ,  H01L21/8238 ,  H01L29/161 ,  H01L29/423 ,  H01L29/49 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L27/0928 ,  H01L21/823814 ,  H01L21/823842 ,  H01L21/823857 ,  H01L21/823892 ,  H01L29/161 ,  H01L29/42364 ,  H01L29/4966 ,  H01L29/66492 ,  H01L29/7833

Abstract: The present disclosure relates to semiconductor devices, and more particularly, to high voltage extended drain MOSFET (EDMOS) devices in a high-k metal gate (HKMG) and methods of manufacture. A structure of the present disclosure includes a plurality of extended drain MOSFET (EDMOS) devices on a high voltage well with a split-gate dielectric material including a first gate dielectric material and a second gate dielectric material, the second gate dielectric material including a thinner thickness than the first gate dielectric material, and a high-k dielectric material on the split-gate dielectric material.