公开(公告)号：US20220238409A1

公开(公告)日：2022-07-28

申请号：US17156634

申请日：2021-01-25

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： RAMSEY HAZBUN ,  SIVA P. ADUSUMILLI ,  MARK DAVID LEVY ,  ALVIN JOSEPH

IPC: H01L23/367 ,  H01L21/48

Abstract: A semiconductor structure is provided. The semiconductor structure comprises a heat generating device arranged over a substrate. An interlayer dielectric (ILD) material may be arranged over the heat generating device and the substrate. A metallization layer may be arranged over the interlayer dielectric material. A thermal shunt structure may be arranged proximal the heat generating device, whereby an upper portion of the thermal shunt structure may be arranged in the interlayer dielectric material and may be lower than the metallization layer, and a lower portion of the thermal shunt structure may be arranged in the substrate.