公开(公告)号：US20220238409A1

公开(公告)日：2022-07-28

申请号：US17156634

申请日：2021-01-25

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： RAMSEY HAZBUN ,  SIVA P. ADUSUMILLI ,  MARK DAVID LEVY ,  ALVIN JOSEPH

IPC: H01L23/367 ,  H01L21/48

Abstract: A semiconductor structure is provided. The semiconductor structure comprises a heat generating device arranged over a substrate. An interlayer dielectric (ILD) material may be arranged over the heat generating device and the substrate. A metallization layer may be arranged over the interlayer dielectric material. A thermal shunt structure may be arranged proximal the heat generating device, whereby an upper portion of the thermal shunt structure may be arranged in the interlayer dielectric material and may be lower than the metallization layer, and a lower portion of the thermal shunt structure may be arranged in the substrate.

公开(公告)号：US20230155016A1

公开(公告)日：2023-05-18

申请号：US17455016

申请日：2021-11-16

Applicant: GlobalFoundries U.S. Inc.

Inventor： RAMSEY HAZBUN ,  ANTHONY STAMPER ,  ZHONG-XIANG HE ,  PERNELL DONGMO

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/205 ,  H01L29/66

CPC classification number: H01L29/7786 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/66462

Abstract: A transistor structure is provided, the structure may be for a high electron mobility transistor (HEMT). The HEMT comprises a channel layer arranged over a substrate, the channel layer may have a top surface. A barrier layer may be arranged over the channel layer. A first opening may be in the barrier layer and extend partially into the channel layer. A first barrier liner may be arranged in the first opening and over the channel layer, the first barrier liner may have a bottom surface. The bottom surface of the first barrier liner may be lower than the top surface of the channel layer.

公开(公告)号：US20230420326A1

公开(公告)日：2023-12-28

申请号：US17808110

申请日：2022-06-22

Applicant: GlobalFoundries U.S. INC.

Inventor： ZHONG-XIANG HE ,  RAMSEY HAZBUN ,  RAJENDRAN KRISHNASAMY ,  JOHNATAN AVRAHAM KANTAROVSKY ,  MICHEL ABOU-KHALIL ,  RICHARD RASSEL

IPC: H01L23/367 ,  H01L23/48 ,  H01L21/48

CPC classification number: H01L23/367 ,  H01L29/778 ,  H01L21/4882 ,  H01L23/481

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a semiconductor layer, a device layer, and heat dissipating structures. The semiconductor layer is over the substrate and the device layer is over the semiconductor layer. The device layer includes a first ohmic contact and a second ohmic contact. The heat dissipating structures are at least through the substrate and the semiconductor layer, and between the first ohmic contact and the second ohmic contact.