公开(公告)号：US11133397B2

公开(公告)日：2021-09-28

申请号：US16430843

申请日：2019-06-04

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Alexander Lee Martin ,  Jagar Singh

IPC: H01L31/072 ,  H01L29/66 ,  H01L29/737 ,  H01L21/285 ,  H01L29/417 ,  H01L21/033 ,  H01L29/423 ,  H01L29/16

Abstract: One illustrative method of forming heterojunction bipolar devices includes, among other things, forming a first gate structure above an active semiconductor layer, forming a second gate structure adjacent a first side of the first gate structure, forming a third gate structure adjacent a second side of the first gate structure, forming an emitter of a bipolar transistor in the active semiconductor layer between the first gate structure and the second gate structure, forming a collector of the bipolar transistor in the active semiconductor layer between the first gate structure and the third gate structure, and forming a first base contact contacting the active region adjacent an end of the first gate structure, wherein a portion of the active semiconductor layer positioned under the first gate structure defines a base of the bipolar transistor.