公开(公告)号：US11728192B2

公开(公告)日：2023-08-15

申请号：US17382415

申请日：2021-07-22

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Chenlong Miao ,  Haizhou Yin ,  Michael J. Wojtowecz

IPC: H01L21/67 ,  G06T7/00 ,  G01N23/2251

CPC classification number: H01L21/67288 ,  G01N23/2251 ,  G06T7/001 ,  G01N2223/071 ,  G01N2223/401 ,  G06T2207/10061 ,  G06T2207/30148

Abstract: An optical inspection is performed to detect potential defects within integrated circuit devices and a first electron-based inspection of less than all of the potential defects is performed to identify primary actual defects. A process window of manufacturing parameter settings used to manufacture the integrated circuit devices is identified and the integrated circuit devices manufactured using the manufacturing parameter settings inside the process window have less than a threshold number of the primary actual defects. To identify additional actual defects a second electron-based inspection is performed that is limited to selected ones of the potential defects in the integrated circuit devices that were manufactured using the manufacturing parameter settings inside the process window but were uninspected in the first electron-based inspection.

公开(公告)号：US20230024266A1

公开(公告)日：2023-01-26

申请号：US17382415

申请日：2021-07-22

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Chenlong Miao ,  Haizhou Yin ,  Michael J. Wojtowecz

IPC: H01L21/67 ,  G06T7/00 ,  G01N23/2251

Abstract: An optical inspection is performed to detect potential defects within integrated circuit devices and a first electron-based inspection of less than all of the potential defects is performed to identify primary actual defects. A process window of manufacturing parameter settings used to manufacture the integrated circuit devices is identified and the integrated circuit devices manufactured using the manufacturing parameter settings inside the process window have less than a threshold number of the primary actual defects. To identify additional actual defects a second electron-based inspection is performed that is limited to selected ones of the potential defects in the integrated circuit devices that were manufactured using the manufacturing parameter settings inside the process window but were uninspected in the first electron-based inspection.