公开(公告)号：US11205648B2

公开(公告)日：2021-12-21

申请号：US16866663

申请日：2020-05-05

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Anton V. Tokranov ,  James P. Mazza ,  Elizabeth A. Strehlow ,  Harold Mendoza ,  Jay A. Mody ,  Clynn J. Mathew ,  Hong Yu ,  Yea-Sen Lin

IPC: H01L27/088 ,  H01L29/36 ,  H01L29/78 ,  H01L27/06 ,  H01L29/66 ,  H01L21/8234

Abstract: An integrated circuit (IC) structure with a single active region having a doping profile different than that of a set of active regions, is disclosed. The IC structure provides a single active region, e.g., a fin, on a substrate with a first doping profile, and a set of active regions, e.g., fins, electrically isolated from the single active region on the substrate. The set of active regions have a second doping profile that is different than the first doping profile of the single active region. For example, the second doping profile can have a deeper penetration into the substrate than the first doping profile.

公开(公告)号：US20210351283A1

公开(公告)日：2021-11-11

申请号：US16866663

申请日：2020-05-05

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Anton V. Tokranov ,  James P. Mazza ,  Elizabeth A. Strehlow ,  Harold Mendoza ,  Jay A. Mody ,  Clynn J. Mathew ,  Hong Yu ,  Yea-Sen Lin

IPC: H01L29/66 ,  H01L29/10 ,  H01L27/06 ,  H01L27/088

Abstract: An integrated circuit (IC) structure with a single active region having a doping profile different than that of a set of active regions, is disclosed. The IC structure provides a single active region, e.g., a fin, on a substrate with a first doping profile, and a set of active regions, e.g., fins, electrically isolated from the single active region on the substrate. The set of active regions have a second doping profile that is different than the first doping profile of the single active region. For example, the second doping profile can have a deeper penetration into the substrate than the first doping profile.