公开(公告)号：US11171036B2

公开(公告)日：2021-11-09

申请号：US16596814

申请日：2019-10-09

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Yongjun Shi ,  Wei Hong ,  Chun Yu Wong ,  Halting Wang ,  Liu Jiang

IPC: H01L21/762 ,  H01L27/12

Abstract: A method and related structure provide a void-free dielectric over trench isolation region in an FDSOI substrate. The structure may include a first transistor including a first active gate over the substrate, a second transistor including a second active gate over the substrate, a first liner extending over the first transistor, and a second, different liner extending over the second transistor. A trench isolation region electrically isolates the first transistor from the second transistor. The trench isolation region includes a trench isolation extending into the FDSOI substrate and an inactive gate over the trench isolation. A dielectric extends over the inactive gate and in direct contact with an upper surface of the trench isolation region. The dielectric is void-free, and the liners do not extend over the trench isolation.

公开(公告)号：US20210111065A1

公开(公告)日：2021-04-15

申请号：US16596814

申请日：2019-10-09

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Yongjun Shi ,  Wei Hong ,  Chun Yu Wong ,  Haiting Wang ,  Liu Jiang

IPC: H01L21/762 ,  H01L27/12

Abstract: A method and related structure provide a void-free dielectric over trench isolation region in an FDSOI substrate. The structure may include a first transistor including a first active gate over the substrate, a second transistor including a second active gate over the substrate, a first liner extending over the first transistor, and a second, different liner extending over the second transistor. A trench isolation region electrically isolates the first transistor from the second transistor. The trench isolation region includes a trench isolation extending into the FDSOI substrate and an inactive gate over the trench isolation. A dielectric extends over the inactive gate and in direct contact with an upper surface of the trench isolation region. The dielectric is void-free, and the liners do not extend over the trench isolation.