公开(公告)号：US12132128B2

公开(公告)日：2024-10-29

申请号：US18517160

申请日：2023-11-22

申请人： GOLD STONE (FUJIAN) ENERGY COMPANY LIMITED

发明人： Kairui Lin ,  Chaohua Zhang

IPC分类号： H01L31/0236 ,  H01L31/02 ,  H01L31/0224 ,  H01L31/077 ,  H01L31/18

CPC分类号： H01L31/02366 ,  H01L31/0201 ,  H01L31/022441 ,  H01L31/022475 ,  H01L31/077 ,  H01L31/188 ,  H01L31/1888

摘要： A back-contact cell with isolation grooves specifically disposed and a preparation method thereof. The back-contact cell includes: a silicon substrate having, on a back side, a polished region and a textured region disposed alternately along an X-axis direction of the back side, a first semiconductor layer disposed on the polished region, and a second semiconductor layer disposed on the textured region. The back-contact cell further includes a conductive film layer and a conductive mask layer sequentially disposed outwardly along a Z-axis direction of the back side. A conductive composite layer formed by the conductive mask layer and the conductive film layer is provided with isolation grooves disposed at intervals along the X-axis direction. The isolation groove is located above a contact interface between the first semiconductor layer and the second semiconductor layer in the Z-axis direction, and the isolation groove spans part of the polished region and part of the textured region in the X-axis direction.