公开(公告)号：US12021158B2

公开(公告)日：2024-06-25

申请号：US18120578

申请日：2023-03-13

申请人： Golden Solar (Quanzhou) New Energy Technology Co., Ltd.

发明人： Kairui Lin

IPC分类号： H01L31/0224 ,  H01L31/0216 ,  H01L31/0236 ,  H01L31/028 ,  H01L31/0368 ,  H01L31/0376 ,  H01L31/077 ,  H01L31/18

CPC分类号： H01L31/022441 ,  H01L31/02168 ,  H01L31/02366 ,  H01L31/028 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/077 ,  H01L31/1824

摘要： The present disclosure pertains to the field of back contact heterojunction cell technologies, and particularly relates to a mask-layer-free hybrid passivation back contact cell and a fabrication method thereof; the method includes: S101: providing a silicon wafer substrate; S102: sequentially forming a first semiconductor layer and a mask layer on a back surface of the silicon wafer substrate, wherein the first semiconductor layer includes a tunneling oxide layer and a first doped polycrystalline layer; S103: performing first etching on the first semiconductor layer on the obtained back surface to form first opening regions W1; S104: forming a textured surface in the first opening region W1 on the back surface by texturing and cleaning; S105: removing the mask layer; S106: forming a second semiconductor layer on the obtained back surface; and S107: performing second etching on a polished region of the obtained back surface.

公开(公告)号：US20240178336A1

公开(公告)日：2024-05-30

申请号：US18178228

申请日：2023-03-03

申请人： ZHEJIANG JINKO SOLAR CO., LTD. ,  JINKO SOLAR CO., LTD.

发明人： Jingsheng JIN ,  Guangming LIAO

IPC分类号： H01L31/077 ,  H01L31/02 ,  H01L31/0224 ,  H01L31/028 ,  H01L31/048 ,  H01L31/05

CPC分类号： H01L31/077 ,  H01L31/02008 ,  H01L31/022425 ,  H01L31/028 ,  H01L31/048 ,  H01L31/0512

摘要： A solar cell and a photovoltaic module. The solar cell includes: a substrate including a first surface; a tunneling oxide layer covering the first surface; a doped conductive layer covering a surface of the tunneling oxide layer away from the substrate; an intrinsic polycrystalline silicon layer formed on one side of the doped conductive layer away from the tunneling oxide layer; and a plurality of first electrodes arranged on one side of the intrinsic polycrystalline silicon layer away from the doped conductive layer and electrically connected to the doped conductive layer. At least a portion of the first electrode is located in the intrinsic polycrystalline silicon layer, and a gap is defined between a top end of the first electrode and the substrate.

公开(公告)号：US11799039B2

公开(公告)日：2023-10-24

申请号：US17080530

申请日：2020-10-26

申请人： OXFORD UNIVERSITY INNOVATION LIMITED

发明人： Henry J. Snaith ,  Antonio Abate ,  Nakita K. Noel

IPC分类号： H01L31/0216 ,  H10K30/88 ,  H10K85/00 ,  H01L31/032 ,  H01L31/077 ,  H01L31/18 ,  H10K30/10 ,  H10K30/15 ,  H10K102/10

CPC分类号： H01L31/02167 ,  H01L31/032 ,  H01L31/077 ,  H01L31/1868 ,  H10K30/88 ,  H10K85/00 ,  H10K30/10 ,  H10K30/151 ,  H10K2102/102 ,  Y02E10/549 ,  Y02P70/50

摘要： The present invention relates to devices comprising metal halide perovskites and organic passivating agents. In particular, the invention relates to photovoltaic and optoelectronic devices comprising passivated metal halide perovskites. The device according to the invention comprises: (a) a metal halide perovskite; and (b) a passivating agent which is an organic compound; wherein molecules of the passivating agent are chemically bonded to anions or cations in the metal halide perovskite. The invention also provides a process for producing a photovoltaic device, which photovoltaic device comprises: (a) a metal halide perovskite; and (b) a passivating agent which is an organic compound; wherein molecules of the passivating agent are chemically bonded to anions or cations in the metal halide perovskite, wherein the process comprises treating a metal halide perovskite with a passivating agent, which passivating agent is an organic compound and is suitable for chemically bonding to anions or cations in the metal halide perovskite.

公开(公告)号：US20180069141A1

公开(公告)日：2018-03-08

申请号：US15812673

申请日：2017-11-14

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： STEPHEN W. BEDELL ,  BAHMAN HEKMATSHOARTABARI ,  DEVENDRA K. SADANA ,  GHAVAM G. SHAHIDI ,  DAVOOD SHAHRJERDI

IPC分类号： H01L31/0465 ,  H01L31/20 ,  H01L31/046 ,  H01L31/18 ,  H01L31/0475 ,  H01L31/05 ,  H01L31/076 ,  H01L31/0224 ,  H01L31/077 ,  H01L31/0747 ,  H01L31/075 ,  H01L31/0463 ,  H01L31/068

CPC分类号： H01L31/0465 ,  H01L31/022466 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/0475 ,  H01L31/0504 ,  H01L31/0684 ,  H01L31/0747 ,  H01L31/075 ,  H01L31/076 ,  H01L31/077 ,  H01L31/1876 ,  H01L31/1888 ,  H01L31/1896 ,  H01L31/204 ,  H01L31/208 ,  Y02E10/50

摘要： A method for fabricating a device with integrated photovoltaic cells includes supporting a semiconductor substrate on a first handle substrate and doping the semiconductor substrate to form doped alternating regions with opposite conductivity. A doped layer is formed over a first side the semiconductor substrate. A conductive material is patterned over the doped layer to form conductive islands such that the conductive islands are aligned with the alternating regions to define a plurality of photovoltaic cells connected in series on a monolithic structure.

公开(公告)号：US09865762B2

公开(公告)日：2018-01-09

申请号：US14430540

申请日：2013-09-27

申请人： KANEKA CORPORATION

发明人： Tomomi Meguro ,  Kenji Yamamoto

IPC分类号： H01L31/0224 ,  H01L31/077 ,  H01L31/0236 ,  H01L31/0392 ,  H01L31/0376 ,  H01L31/18 ,  H01L31/076 ,  H01L31/0368 ,  H01L31/075 ,  H01L31/0745 ,  H01L31/0747

CPC分类号： H01L31/077 ,  H01L31/022483 ,  H01L31/02366 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/03765 ,  H01L31/03921 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/075 ,  H01L31/076 ,  H01L31/1804 ,  H01L31/1888 ,  Y02E10/545 ,  Y02E10/548

摘要： The thin-film photoelectric conversion device of the present invention includes: a transparent electroconductive film having zinc oxide as a main component; a contact layer; a photoelectric conversion unit having a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer in this order; and a back electrode layer, in this order, on one main surface of a substrate. The contact layer has an intrinsic crystalline semiconductor layer and a p-type crystalline semiconductor layer in this order from the substrate side, and the intrinsic crystalline semiconductor layer of the contact layer and the transparent electroconductive film are in contact with each other. The p-type crystalline semiconductor layer of the contact layer is preferably a layer having as a main component a silicon alloy selected from the group consisting of a silicon oxide; a silicon nitride; and silicon carbide.

公开(公告)号：US09859454B2

公开(公告)日：2018-01-02

申请号：US14251935

申请日：2014-04-14

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Kazuo Nishi

IPC分类号： H01L31/18 ,  H01L31/028 ,  H01L31/077 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/0465 ,  H01L21/02

CPC分类号： H01L31/182 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02672 ,  H01L31/028 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/0465 ,  H01L31/077 ,  H01L31/186 ,  H01L31/1872 ,  Y02E10/547 ,  Y02P70/521

摘要： In a thin film photoelectric conversion device fabricated by addition of a catalyst element with the use of a solid phase growth method, defects such as a short circuit or leakage of current are suppressed. A catalyst material which promotes crystallization of silicon is selectively added to a second silicon semiconductor layer formed over a first silicon semiconductor layer having one conductivity type, the second silicon semiconductor layer is partly crystallized by a heat treatment, a third silicon semiconductor layer having a conductivity type opposite to the one conductivity type is stacked, and element isolation is performed at a region in the second silicon semiconductor layer to which a catalyst material is not added, so that a left catalyst material is prevented from being diffused again, and defects such as a short circuit or leakage of current are suppressed.

公开(公告)号：US09825196B2

公开(公告)日：2017-11-21

申请号：US14644486

申请日：2015-03-11

申请人： Institute of Nuclear Energy Research Atomic Energy Council, Executive Yuan

发明人： Min-Chuan Wang ,  Tian-You Liao ,  Chih-Pong Huang ,  Der-Jun Jan

IPC分类号： H01L31/00 ,  H01L31/18 ,  H01L31/077 ,  H01L31/0392

CPC分类号： H01L31/1824 ,  H01L31/03921 ,  H01L31/077 ,  H01L31/1804 ,  H01L31/1816 ,  H01L31/1884 ,  Y02E10/547 ,  Y02P70/521

摘要： The present invention relates to a microcrystalline silicon thin film solar cell and the manufacturing method thereof, using which not only the crystallinity of a microcrystalline silicon thin film that is to be formed by the manufacturing method can be controlled and adjusted at will and the defects in the microcrystalline silicon thin film can be fixed, but also the device characteristic degradation due to chamber contamination happening in the manufacturing process, such as plasma enhanced chemical vapor deposition (PECVD), can be eliminated effectively.

公开(公告)号：US20170288071A1

公开(公告)日：2017-10-05

申请号：US15622515

申请日：2017-06-14

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： KEITH E. FOGEL ,  AUGUSTIN J. HONG ,  JEEHWAN KIM ,  DEVENDRA K. SADANA

IPC分类号： H01L31/0236 ,  H01L31/0224 ,  H01L31/075 ,  H01L31/077 ,  H01L31/0376 ,  H01L31/0352 ,  H01L31/18

CPC分类号： H01L31/02366 ,  H01L31/022483 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/03762 ,  H01L31/075 ,  H01L31/077 ,  H01L31/1804 ,  H01L31/1888 ,  Y02E10/50

摘要： A photovoltaic device and method include forming a plurality of pillar structures in a substrate, forming a first electrode layer on the pillar structures and forming a continuous photovoltaic stack including an N-type layer, a P-type layer and an intrinsic layer on the first electrode. A second electrode layer is deposited over the photovoltaic stack such that gaps or fissures occur in the second electrode layer between the pillar structures. The second electrode layer is wet etched to open up the gaps or fissures and reduce the second electrode layer to form a three-dimensional electrode of substantially uniform thickness over the photovoltaic stack.

公开(公告)号：US20170200841A1

公开(公告)日：2017-07-13

申请号：US15378088

申请日：2016-12-14

申请人： Sharp Kabushiki Kaisha ,  The University of Tokyo

发明人： Hirofumi YOSHIKAWA ,  Makoto IZUMI ,  Yasuhiko ARAKAWA ,  Katsuyuki WATANABE

IPC分类号： H01L31/0352 ,  H01L31/109 ,  H01L31/0735 ,  H01L31/0304

CPC分类号： H01L31/035236 ,  H01L31/03046 ,  H01L31/035218 ,  H01L31/0735 ,  H01L31/077 ,  H01L31/105 ,  H01L31/109 ,  Y02E10/544

摘要： A photoelectric conversion element includes a photoelectric conversion layer having the quantum structure and utilizes intersubband transition in a conduction band. The photoelectric conversion element includes a superlattice semiconductor layer in which a barrier layer and a quantum dot layer as a quantum layer are alternately and repeatedly stacked. The barrier layer includes an indirect transition semiconductor material, and the quantum dot layer has a nano-structure including a direct transition semiconductor material. The indirect transition semiconductor material constituting the barrier layer has a bandgap of more than 1.42 eV at room temperature.

公开(公告)号：US20160155866A1

公开(公告)日：2016-06-02

申请号：US14953264

申请日：2015-11-27

申请人： LG ELECTRONICS INC.

发明人： Jungmin HA ,  Sungjin KIM ,  Juhwa CHEONG ,  Junyong AHN ,  Hyungwook CHOI ,  Wonjae CHANG ,  Jaesung KIM

IPC分类号： H01L31/0224 ,  H01L31/0368 ,  H01L31/077 ,  H01L31/02 ,  H01L31/18 ,  H01L31/0216

CPC分类号： H01L31/022433 ,  H01L31/0201 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/03685 ,  H01L31/0747 ,  H01L31/077 ,  H01L31/1824 ,  H01L31/1864 ,  H01L31/1868 ,  Y02E10/50

摘要： Disclosed are a solar cell and a method for manufacturing the same. A solar cell includes a semiconductor substrate, a tunnel layer on the first surface of the semiconductor substrate, a first conductive type semiconductor region on the tunnel layer and includes impurities of a first conductive type, a second conductive type semiconductor region on a second surface and includes impurities of a second conductive type opposite the first conductive type, a first passivation film on the first conductive type semiconductor region, a first electrode formed on the first passivation film and connected to the first conductive type semiconductor region through an opening portion formed in the first passivation film, a second passivation film on the second conductive type semiconductor region, and a second electrode formed on the second passivation film and connected to the second conductive type semiconductor region through an opening portion formed in the second passivation film.

摘要翻译： 公开了一种太阳能电池及其制造方法。 太阳能电池包括半导体衬底，半导体衬底的第一表面上的隧道层，隧道层上的第一导电类型半导体区域，并且包括第一导电类型的杂质，第二表面上的第二导电类型半导体区域， 包括与第一导电类型相反的第二导电类型的杂质，第一导电类型半导体区域上的第一钝化膜，形成在第一钝化膜上并通过形成在第一导电类型半导体区域中的开口部分连接到第一导电类型半导体区域的第一电极 第一钝化膜，第二导电型半导体区域上的第二钝化膜，以及形成在第二钝化膜上并通过形成在第二钝化膜中的开口部分连接到第二导电型半导体区域的第二电极。