公开(公告)号：US20220231157A1

公开(公告)日：2022-07-21

申请号：US17614972

申请日：2020-06-01

Applicant: GPOWER SEMICONDUCTOR, INC.

Inventor： Junfeng WU ,  Xingxing WU ,  Yi PEI

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/417 ,  H01L29/423 ,  H01L23/495 ,  H01L29/40 ,  H01L29/66

Abstract: The present disclosure discloses a semiconductor device, a method of manufacturing the same, and a semiconductor package structure. The semiconductor device including a substrate, a multilayer semiconductor layer located on one side of the substrate, in which a Two-Dimensional Electron Gas is formed, a first source, a first gate and a first drain located on one side of the multilayer semiconductor layer and located within an active region of the multilayer semiconductor layer, the first gate being located between the first source and the first drain, and a back surface gate contact electrode located on one side of the substrate away from the multilayer semiconductor layer, wherein the first gate is electrically connected to the back surface gate contact electrode. A signal is provided from the back surface of the semiconductor device to the first gate, to reduce the parasitic inductance and parasitic resistance caused by the device during the packaging process.