公开(公告)号：US20140264293A1

公开(公告)日：2014-09-18

申请号：US13826495

申请日：2013-03-14

Applicant: GUARDIAN INDUSTRIES CORP.

Inventor： Tukaram K. HATWAR ,  Willem Den Boer ,  Vijayen S. Veerasamy

IPC: H01L51/52 ,  H01L51/56

CPC classification number: H01L51/5268 ,  C08G83/001 ,  C09D7/00 ,  G02B5/0242 ,  G02B5/0268 ,  H01L51/5275 ,  Y10T428/24893

Abstract: Certain example embodiments relate to light emitting diode (e.g., OLED and/or PLED) inclusive devices, and/or methods of making the same. Certain example embodiments incorporate an optical out-coupling layer stack (OCLS) structure that includes a vacuum deposited index matching layer (imL) provided over an organo-metallic scattering matrix layer. The imL may be a silicon-inclusive layer and may include, for example, vacuum deposited SiOxNy. The OCLS including scattering micro-particles, the imL, and the anode may be designed such that the device extraction efficiency is significantly improved, e.g., by efficiently coupling the light generated in the organic layers of the devices and extracted through the glass substrate. In certain example embodiments, the refractive index of the ITO, SiOxNy index matching layer, OCLS scattering layer and the glass substrate may be provided in decreasing order.

Abstract translation: 某些示例实施例涉及包含发光二极管（例如，OLED和/或PLED）的设备，和/或制造它们的方法。 某些示例性实施例包括光学输出耦合层堆叠（OCLS）结构，其包括在有机金属散射矩阵层上提供的真空沉积折射率匹配层（imL）。 imL可以是含硅的层，并且可以包括例如真空沉积的SiO x N y。 可以设计包括散射微粒子，imL和阳极的OCLS，使得器件提取效率显着提高，例如通过有效地耦合在器件的有机层中产生的光并通过玻璃衬底提取。 在某些示例性实施例中，可以以降序的顺序提供ITO，SiOxNy折射率匹配层，OCLS散射层和玻璃基板的折射率。

公开(公告)号：US20140017830A1

公开(公告)日：2014-01-16

申请号：US13934253

申请日：2013-07-03

Applicant: Guardian Industries Corp.

Inventor： Vijayen S. VEERASAMY ,  Jens-Peter MULLER ,  Tukaram K. HATWAR

IPC: H01L51/56 ,  H01L51/52

CPC classification number: H01L51/5262 ,  C03C17/3417 ,  H01L51/5206 ,  H01L51/56

Abstract: Certain example embodiments relate to organic light emitting diode (OLED)/polymer light emitting diode (PLED) devices, and/or methods of making the same. A first transparent conductive coating (TCC) layer is disposed, directly or indirectly, on a glass substrate. An outermost major surface of the TCC layer is planarized by exposing the outermost major surface thereof to an ion beam. Following said planarizing, the first TCC layer has an arithmetic mean value RMS roughness (Ra) of less than 1.5 nm. A hole transporting layer (HTL) and an electron transporting and emitting layer (ETL) are disposed, directly or indirectly, on the planarized outermost major surface of the first TCC layer. A second TCC layer is disposed, directly or indirectly, on the HTL and the ETL. One or both TCC layers may include ITO. The substrate and/or an optional optical out-coupling layer stack system may be planarized using an ion beam.

Abstract translation: 某些示例实施例涉及有机发光二极管（OLED）/聚合物发光二极管（PLED）器件，和/或制造其的方法。 第一透明导电涂层（TCC）层直接或间接设置在玻璃基板上。 通过将其最外面的主表面暴露于离子束，使TCC层的最外面的主表面平坦化。 在所述平坦化之后，第一TCC层具有小于1.5nm的算术平均值RMS粗糙度（Ra）。 空穴传输层（HTL）和电子传输和发射层（ETL）直接或间接设置在第一TCC层的平坦化最外主表面上。 第二个TCC层直接或间接设置在HTL和ETL上。 一个或两个TCC层可以包括ITO。 基板和/或可选的光输出耦合层堆叠系统可以使用离子束进行平面化。