公开(公告)号：US5763320A

公开(公告)日：1998-06-09

申请号：US570070

申请日：1995-12-11

申请人： Gary Don Stevens ,  Jeffrey Scott Reynolds ,  Louanne Kay Brown

发明人： Gary Don Stevens ,  Jeffrey Scott Reynolds ,  Louanne Kay Brown

IPC分类号： H01L31/0288 ,  H01L31/0352 ,  H01L31/18 ,  H01L21/22

CPC分类号： H01L31/035281 ,  H01L31/0288 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A method (10,30) of boron doping a semiconductor particle using boric acid to obtain a p-type doped particle. Either silicon spheres or silicon powder is mixed with a diluted solution of boric acid having a predetermined concentration. The spheres are dried (16), with the boron film then being driven (18) into the sphere. A melt procedure mixes the driven boron uniformly throughout the sphere. In the case of silicon powder, the powder is metered out (38) into piles and melted/fused (40) with an optical furnace. Both processes obtain a p-type doped silicon sphere with desired resistivity. Boric acid is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirements.

摘要翻译： 使用硼酸掺杂半导体颗粒以获得p型掺杂颗粒的方法（10,30）。 将硅球或硅粉末与预定浓度的硼酸稀释溶液混合。 将球体干燥（16），然后硼膜被驱动（18）进入球体。 熔融程序将驱动的硼在整个球体中均匀混合。 在硅粉的情况下，将粉末计量（38）成堆并用光学炉熔化（40）。 两种工艺获得具有所需电阻率的p型掺杂硅球体。 硼酸不是限制性化学品，价格便宜，并不构成任何特殊的运输，处理或处置要求。