公开(公告)号：US4883648A

公开(公告)日：1989-11-28

申请号：US79259

申请日：1987-07-29

申请人： Geoffrey J. Davies ,  Lesley K. Hedges ,  Stuart H. Robertson

发明人： Geoffrey J. Davies ,  Lesley K. Hedges ,  Stuart H. Robertson

IPC分类号： B01J3/06 ,  C30B9/00

CPC分类号： C30B9/00 ,  B01J3/062 ,  C30B29/403 ,  B01J2203/0645 ,  B01J2203/066 ,  B01J2203/068 ,  Y10T117/1096

摘要： A method is provided for producing large cubic boron nitride crystals having the size of 0.1 carat or larger. The method involves providing a reaction vessel which contains CBN seed material (32), a CBN source (26) separated from the seed material and sandwiched between two masses (22) (24) of solvent/catalyst for CBN synthesis which is capable of melting under CBN synthetic conditions, and contains sufficient hexagonal boron nitride to saturate the catalyst with boron nitride when molten, the separation of seed material and source material being such that under the operating conditions of CBN synthesis a temperature gradient is created between the seed material and the source material with the seed material being located at a point near the minimum value of temperature of the temperature gradient and the source material being located at a point near the maximum value of temperature of the temperature gradient, placing that reaction vessel in the reaction zone of a high temperature/high pressure apparatus and subjecting the contents of the reaction vessel to conditions of temperature and pressure in the CBN stable region of the boron nitride phase diagram for a period of at least several hours and not more than 24 hours.

摘要翻译： 提供了一种制备尺寸为0.1克拉或更大的大型立方氮化硼晶体的方法。 该方法包括提供包含CBN种子材料（32）的反应容器，与种子材料分离的CBN源（26），并夹在用于CBN合成的溶剂/催化剂的两个质量块（22）（24） 在CBN合成条件下，并且含有足够的六方氮化硼使熔融时氮化硼饱和，种子材料和源材料的分离使得在CBN合成的操作条件下，在种子材料和 源材料，其种子材料位于接近温度梯度温度的最小值的点处，并且源材料位于接近温度梯度的最大温度值的点，将该反应容器置于反应区 高温高压装置，使反应容器的内容物经受温度和压力的条件 在氮化硼相图的CBN稳定区域中保持至少数小时至不超过24小时的时间。

公开(公告)号：US5130549A

公开(公告)日：1992-07-14

申请号：US494945

申请日：1990-03-14

申请人： Geoffrey J. Davies ,  Tom L. Nam ,  Rex J. Keddy ,  Lesley K. Hedges

发明人： Geoffrey J. Davies ,  Tom L. Nam ,  Rex J. Keddy ,  Lesley K. Hedges

IPC分类号： C01B21/064 ,  C09K11/63 ,  G01T1/11

CPC分类号： C09K11/63

摘要： Cubic boron nitride having an impurity profile as set out below has been found to exhibit excellent thermoluminescent properties with a high gamma radiation sensitivity and low light sensitivity:______________________________________ Impurity Content - less than ______________________________________ Carbon 1100 ppm Oxygen 1500 ppm Silicon 100 ppm Phosphorus 30 ppm Titanium 30 ppm Beryllium 1 ppm ______________________________________