公开(公告)号：US5633102A

公开(公告)日：1997-05-27

申请号：US396926

申请日：1995-03-01

申请人： Kenny K. H. Toh ,  Giang T. Dao ,  Eng T. Gaw ,  Rajeev R. Singh

发明人： Kenny K. H. Toh ,  Giang T. Dao ,  Eng T. Gaw ,  Rajeev R. Singh

IPC分类号： G03F1/34 ,  G03F9/00

CPC分类号： G03F1/34

摘要： Methods of forming a patterned layer using a reticle having a phase-shifting element and the reticles for making the patterns are disclosed. The methods of the present invention use a phase-shifting element to change the phase of the radiation exiting a reticle about 180.degree. out of phase compared to the radiation exiting the areas immediately adjacent to an edge of the phase-shifting element so that radiation from both areas near the edge destructively interfere with each other so as to cancel out one another thereby resulting in a substantially unexposed region on a semiconductor substrate. The present invention can be used to prevent exposing a large area by using a set of phase-shifting elements to form a grating or checkerboard area.

摘要翻译： 公开了使用具有相移元件的掩模版和用于制作图案的掩模版形成图案层的方法。 与离开与相移元件的边缘紧邻的区域的辐射相比，本发明的方法使用相移元件来改变离开标线的辐射的相位大约180°异相，使得来自 靠近边缘的两个区域相互干涉地彼此抵消，从而在半导体衬底上形成基本上未曝光的区域。 本发明可以用于通过使用一组移相元件来防止暴露大面积以形成光栅或棋盘区域。

公开(公告)号：US5354632A

公开(公告)日：1994-10-11

申请号：US869026

申请日：1992-04-15

申请人： Giang T. Dao ,  Kenny K. H. Toh ,  Eng T. Gaw ,  Rajeev R. Singh

发明人： Giang T. Dao ,  Kenny K. H. Toh ,  Eng T. Gaw ,  Rajeev R. Singh

IPC分类号： G03F1/00 ,  G03F1/29 ,  G03F7/20 ,  H01L21/027 ,  H01L21/30 ,  G03F9/00 ,  G03F9/02

CPC分类号： G03F7/70283 ,  G03F1/29

摘要： A reticle and method of forming a patterned resist layer on a semiconductor substrate using the reticle is described. The substrate is coated with a resist layer. The resist layer is selectively exposed to a radiation wave having a wavelength that is transmitted through the reticle. The reticle includes at least one first, second, and third areas. The first area has a first transmittance. The second area is adjacent to the first area and has a second transmittance that is less than the first transmittance. The second area shifts radiation transmitted through the second area approximately 180.degree. out of phase relative to radiation transmitted through the first area. The third area is adjacent to the second area. The third area is substantially opaque to prevent virtually any transmission of radiation. The resist layer is developed to form the patterned resist layer including at least one resist layer opening and at least one resist element.

摘要翻译： 描述了使用该掩模版在半导体衬底上形成图案化的抗蚀剂层的掩模版和方法。 衬底被涂覆有抗蚀剂层。 抗蚀剂层选择性地暴露于具有透射通过掩模版的波长的辐射波。 掩模版包括至少一个第一，第二和第三区域。 第一区域具有第一透射率。 第二区域与第一区域相邻，并且具有小于第一透射率的第二透射率。 第二区域相对于通过第一区域传输的辐射，使透射通过第二区域的辐射相差大约180度。 第三个区域与第二个区域相邻。 第三区域基本上是不透明的，以防止几乎任何辐射的传播。 显影抗蚀剂层以形成包括至少一个抗蚀剂层开口和至少一个抗蚀剂元件的图案化抗蚀剂层。