公开(公告)号：US07803653B2

公开(公告)日：2010-09-28

申请号：US11834818

申请日：2007-08-07

申请人： Gil-sang Yoo ,  Byung-jun Park ,  Yun-ki Lee

发明人： Gil-sang Yoo ,  Byung-jun Park ,  Yun-ki Lee

IPC分类号： H01L21/00

CPC分类号： H01L27/14609 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14687 ,  H01L27/14689

摘要： A method of manufacturing an image sensor includes forming a device isolation region in an active pixel sensor area of a semiconductor substrate and alignment keys in a scribe lane area of the semiconductor substrate, such that the depth of the alignment keys is equal to or shallower than the depth of the device isolation region. The method further includes forming a photoelectric converter in the active pixel sensor area, polishing a rear surface of the semiconductor substrate and using the alignment keys to form a microlens at a position corresponding to the photoelectric converter on the polished rear surface of the semiconductor substrate.

摘要翻译： 一种制造图像传感器的方法包括在半导体衬底的有源像素传感器区域中形成器件隔离区域和半导体衬底的划线路区域中的对准键，使得对准键的深度等于或小于 设备隔离区域的深度。 该方法还包括在有源像素传感器区域中形成光电转换器，对半导体衬底的后表面进行抛光并使用对准键在与半导体衬底的抛光后表面上的光电转换器对应的位置处形成微透镜。

公开(公告)号：US20080038864A1

公开(公告)日：2008-02-14

申请号：US11834818

申请日：2007-08-07

申请人： Gil-sang Yoo ,  Byung-jun Park ,  Yun-ki Lee

发明人： Gil-sang Yoo ,  Byung-jun Park ,  Yun-ki Lee

IPC分类号： H01L31/18

CPC分类号： H01L27/14609 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14687 ,  H01L27/14689

摘要： A method of manufacturing an image sensor includes forming a device isolation region in an active pixel sensor area of a semiconductor substrate and alignment keys in a scribe lane area of the semiconductor substrate, such that the depth of the alignment keys is equal to or shallower than the depth of the device isolation region. The method further includes forming a photoelectric converter in the active pixel sensor area, polishing a rear surface of the semiconductor substrate and using the alignment keys to form a microlens at a position corresponding to the photoelectric converter on the polished rear surface of the semiconductor substrate.

摘要翻译： 一种制造图像传感器的方法包括在半导体衬底的有源像素传感器区域中形成器件隔离区域和半导体衬底的划线路区域中的对准键，使得对准键的深度等于或小于 设备隔离区域的深度。 该方法还包括在有源像素传感器区域中形成光电转换器，对半导体衬底的后表面进行抛光并使用对准键在与半导体衬底的抛光后表面上的光电转换器对应的位置处形成微透镜。