公开(公告)号：US20200058734A1

公开(公告)日：2020-02-20

申请号：US16103357

申请日：2018-08-14

Applicant: GlobalFoundries Inc.

Inventor： Anupam DUTTA ,  John J. Ellis-Monaghan

IPC: H01L29/06 ,  H01L29/78 ,  H01L29/66

Abstract: The present disclosure relates to a semiconductor device, and more particularly, to a junctionless/accumulation mode transistor with dynamic control and method of manufacturing. The circuit includes a channel region and a threshold voltage control on at least one side of the channel region, the threshold voltage control being configured to provide dynamic control of a voltage threshold, leakage current, and breakdown voltage of the circuit, wherein the threshold voltage control is a different dopant or material of a source region and a drain region of the circuit.