公开(公告)号：US08739098B1

公开(公告)日：2014-05-27

申请号：US13771478

申请日：2013-02-20

Applicant: GlobalFoundries Inc.

Inventor： Christopher H. Clifford ,  Fan Jiang ,  Pawitter Mangat

IPC: G06F17/50

CPC classification number: G03F1/72 ,  G03F1/22

Abstract: Embodiments of the invention provide approaches for extreme ultraviolet (EUV) defect reconstruction and compensation repair. Specifically, a defect starting point of a defect of a mask is determined, and the performance of the mask with the defect is simulated. The simulated performance of the mask is compared to an empirical analysis of the mask to produce a profile of the mask and the defect. An initial image of the mask geometry, with the defect, is calculated, and then compared to a target image of the mask. From this, a compensated layout is generated. As such, embodiments provide a EUV fabrication system that detects and corrects for defects in the blanks and patterned masks to avoid or counteract the defect. Once a compensated pattern has been designed and successfully simulated, the mask may be patterned with the compensated design.

Abstract translation: 本发明的实施例提供了用于极紫外（EUV）缺陷重建和补偿修复的方法。 具体地说，确定掩模的缺陷的缺陷起点，并模拟具有缺陷的掩模的性能。 将掩模的模拟性能与掩模的经验分析进行比较以产生掩模和缺陷的轮廓。 计算具有缺陷的掩模几何的初始图像，然后与掩模的目标图像进行比较。 由此产生补偿布局。 因此，实施例提供了一种EUV制造系统，其检测和校正毛坯和图案化掩模中的缺陷以避免或抵消缺陷。 一旦已经设计并成功地模拟了补偿图案，则可以用补偿设计对掩模进行图案化。