公开(公告)号：US08775981B1

公开(公告)日：2014-07-08

申请号：US13770287

申请日：2013-02-19

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Christopher H. Clifford

IPC: G06F17/50

CPC classification number: G03F7/70433 ,  G03F7/705 ,  G03F7/70941

Abstract: A method includes receiving a layout file for a reticle used to pattern a first die location in a computing apparatus, the layout file defining a plurality of kerf features. A flare map calculation area for the first die location covering at least a portion of a kerf region surrounding the first die location is defined in the computing apparatus. Features in the layout file into the region corresponding to the flare map calculation area that are associated with the patterning of die locations neighboring the first die location are copied in the computing apparatus to generate a modified layout file. A flare map of the portion of the kerf region included in the flare map calculation area based on the modified layout file is calculated in the computing apparatus.

Abstract translation: 一种方法包括接收用于对计算装置中的第一管芯位置进行图案化的掩模版的布局文件，所述布局文件定义多个切口特征。 在计算装置中定义覆盖围绕第一管芯位置的切口区域的至少一部分的第一管芯位置的扩张图计算区域。 将布局文件中的与对应于与第一管芯位置相邻的管芯位置的图案化相关联的闪耀图计算区域的区域的特征复制到计算设备中以生成修改的布局文件。 在计算装置中计算基于修改后的布局文件的包括在耀斑映射计算区域中的切口区域的部分的耀斑图。

公开(公告)号：US08739098B1

公开(公告)日：2014-05-27

申请号：US13771478

申请日：2013-02-20

Applicant: GlobalFoundries Inc.

Inventor： Christopher H. Clifford ,  Fan Jiang ,  Pawitter Mangat

IPC: G06F17/50

CPC classification number: G03F1/72 ,  G03F1/22

Abstract: Embodiments of the invention provide approaches for extreme ultraviolet (EUV) defect reconstruction and compensation repair. Specifically, a defect starting point of a defect of a mask is determined, and the performance of the mask with the defect is simulated. The simulated performance of the mask is compared to an empirical analysis of the mask to produce a profile of the mask and the defect. An initial image of the mask geometry, with the defect, is calculated, and then compared to a target image of the mask. From this, a compensated layout is generated. As such, embodiments provide a EUV fabrication system that detects and corrects for defects in the blanks and patterned masks to avoid or counteract the defect. Once a compensated pattern has been designed and successfully simulated, the mask may be patterned with the compensated design.

Abstract translation: 本发明的实施例提供了用于极紫外（EUV）缺陷重建和补偿修复的方法。 具体地说，确定掩模的缺陷的缺陷起点，并模拟具有缺陷的掩模的性能。 将掩模的模拟性能与掩模的经验分析进行比较以产生掩模和缺陷的轮廓。 计算具有缺陷的掩模几何的初始图像，然后与掩模的目标图像进行比较。 由此产生补偿布局。 因此，实施例提供了一种EUV制造系统，其检测和校正毛坯和图案化掩模中的缺陷以避免或抵消缺陷。 一旦已经设计并成功地模拟了补偿图案，则可以用补偿设计对掩模进行图案化。