公开(公告)号：US10120963B1

公开(公告)日：2018-11-06

申请号：US15587602

申请日：2017-05-05

Applicant: GlobalFoundries Inc.

Inventor： Pardeep Kumar ,  Alan E. Rosenbluth ,  Ramana Murthy Pusuluri ,  Ramya Viswanathan

IPC: G06F17/50

CPC classification number: G06F17/5009 ,  G06F17/5081 ,  G06F2217/10

Abstract: A method for correcting a lithographic pattern includes selecting, by a processor, first stage input factors for utilization with a first computer-implemented model. The processor measures pattern data from existing measured dimensions of a semiconductor to obtain values for the first stage input factors and the first model against the measured pattern data. The processor applies the calibrated first model to predict printed dimensions and the printed dimensions from applying the calibrated first model comprise residuals. The processor establishes, based on the residuals, second stage input factors for a second model and calibrates the second model against the measured pattern data to predict deviations of the printed dimensions from the printed dimensions from the first stage input factors by utilizing the second stage input factors. The method produces predicted printed dimensions of a lithographic pattern by using the second model to revise the printed dimensions of the first model.