公开(公告)号：US12266702B2

公开(公告)日：2025-04-01

申请号：US17834982

申请日：2022-06-08

Applicant: GlobalFoundries Singapore Pte. Ltd.

Inventor： Young Way Teh ,  Bin Zhu ,  Madhu Sudan Mukhopadhyay ,  Subramanian Sundareswara

IPC: H01L29/417 ,  H10B41/10 ,  H10B41/23 ,  H10B43/10 ,  H10B43/23 ,  H10D62/10 ,  H10D64/23

Abstract: Structures for a memory device and methods of forming a structure for a memory device. The structure includes a first and second source/drain regions in a semiconductor substrate, a first gate stack on the semiconductor substrate, and a second gate stack on the semiconductor substrate adjacent to the first gate stack. The first and second gate stacks are positioned in a lateral direction between the first source/drain region and the second source/drain region. The first gate stack includes first and second gate electrodes, and the first gate electrode includes segments spaced apart along a longitudinal axis of the first gate stack.

公开(公告)号：US20230402516A1

公开(公告)日：2023-12-14

申请号：US17834982

申请日：2022-06-08

Applicant: GlobalFoundries Singapore Pte. Ltd.

Inventor： Young Way Teh ,  Bin Zhu ,  Madhu Sudan Mukhopadhyay ,  Subramanian Sundareswara

IPC: H01L29/417 ,  H01L27/11519 ,  H01L27/11553 ,  H01L27/1158 ,  H01L27/11565 ,  H01L29/06

CPC classification number: H01L29/41783 ,  H01L27/11519 ,  H01L27/11553 ,  H01L27/1158 ,  H01L27/11565 ,  H01L29/0649

Abstract: Structures for a memory device and methods of forming a structure for a memory device. The structure includes a first and second source/drain regions in a semiconductor substrate, a first gate stack on the semiconductor substrate, and a second gate stack on the semiconductor substrate adjacent to the first gate stack. The first and second gate stacks are positioned in a lateral direction between the first source/drain region and the second source/drain region. The first gate stack includes first and second gate electrodes, and the first gate electrode includes segments spaced apart along a longitudinal axis of the first gate stack.